EE 311LLB - Electronic Devices and Circuits II

Biasing and active loads in bipolar junction transistor (BJT) and field-effect transistor (FET) integrated circuits; current sources; differential and multistage amplifiers; frequency response of single and multiple transistor amplifier circuits; digital circuits with an emphasis on complementary metal-oxide-semiconductor (CMOS) technology.

Credits: 3

Grading
Graded (GRD)

Typically Offered:
Spring

Requisites:
Pre Requisite: EE 310; Electrical Engineering or Engineering Physics Majors or Electrical Engineering Minors Only. Engineering Physics Majors must complete a faculty advising appointment prior to registering.